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| jmnic product specification silicon npn power transistors 2SC643 description ? ? with to-3 package ? high voltage,high reliability ? low collector saturation voltage applications ? for color tv horizontal output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 2.5 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon npn power transistors 2SC643 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 600 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =2a; i b =0.6a 5.0 v v besat base-emitter saturation voltage i c =2a; i b =0.6a 1.5 v i cbo collector cut-off current v cb =500v;i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe dc current gain i c =2a ; v ce =15v 7 f t transition frequency i c =0.1a ; v ce =10v 2 mhz jmnic product specification 3 silicon npn power transistors 2SC643 package outline fig.2 outline dimensions |
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